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57 pcs
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57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Siemens BUP307 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Siemens. This N-Channel device is designed for robust performance in demanding applications.
Key electrical specifications include a maximum collector current of 35A and a collector-emitter voltage rating of 1200V. The transistor also features a typical collector-emitter saturation voltage of 3.3V, a rise time of 200ns, and a fall time of 300ns. With a maximum power dissipation of 310W, it is suitable for power switching applications.
This IGBT is housed in a TO-218 package and is designed for through-hole mounting. The maximum operating temperature is rated at 150°C, ensuring reliability in various environmental conditions. The BUP307 is a component from Siemens' line of discrete semiconductor products.
Similar parts include the BUP307D from Siemens Semiconductor Group and other IGBTs from manufacturers like STMicroelectronics and International Rectifier. This part is identified by its part number BUP307.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BUP307 is available in a TO-218 through-hole package.
The maximum operating temperature is 150°C.
The maximum collector current is 35A.
The maximum collector-emitter voltage is 1.2kV.
The maximum power dissipation is 310W.
Typical rise time is 200ns and typical fall time is 300ns.
