| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,735 pcs
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2735 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BUK9Y25-60E is a logic-level N-channel MOSFET utilizing TrenchMOS technology, packaged in an LFPAK56 (Power SO8) form factor. This component is designed and qualified to AEC Q101 standards for use in demanding automotive systems.
Key electrical specifications include a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 34A at 25°C. The drain-source on-state resistance (RDSon) is a low 25mΩ at a gate-source voltage (VGS) of 5V and a drain current of 10A. The device is rated for a junction temperature up to 175°C, making it suitable for thermally demanding environments.
Applications for the BUK9Y25-60E include 12V automotive systems, motor control, lamp control, solenoid control, transmission control, and ultra-high-performance power switching. Its true logic-level gate capability with a VGS(th) rating greater than 0.5V at 175°C ensures compatibility with lower gate drive voltages.
The MOSFET is supplied in a surface-mount LFPAK56 package. Its repetitive avalanche rating makes it robust for various power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The typical on-state resistance is 20.8 mΩ at VGS = 5 V and ID = 10 A.
The maximum continuous drain current is 34 A at VGS = 5 V and Tmb = 25 C.
The maximum total power dissipation is 65 W at Tmb = 25 C.
The package type is LFPAK56.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.