| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
304,020 pcs
|
304020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUK9Y22-100E is a logic level N-channel MOSFET using TrenchMOS technology in an LFPAK56 (Power SO8) package. It is qualified to AEC Q101 for automotive applications. Key specifications include a drain-source voltage of 100V, continuous drain current of 49A, and on-resistance of 17.4 mΩ typical at VGS=5V. The device is rated for operating temperatures from -55°C to 175°C. Suitable for 12V, 24V, and 48V automotive systems, motor control, and solenoid control. The package is surface mount with SOT-669 footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.56 | $1.56 |
| 10+ | $0.99 | $0.99 |
| 100+ | $0.66 | $0.66 |
| 500+ | $0.51 | $0.51 |
| 1,000+ | $0.45 | $0.45 |
| 1,500+ | $0.41 | $0.41 |
| 3,000+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 100 V.
The continuous drain current (ID) is 49 A at VGS = 5 V and Tmb = 25°C.
The typical drain-source on-resistance is 17.4 mΩ, with a maximum of 22 mΩ at VGS = 5 V, ID = 15 A, Tj = 25°C.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface mount LFPAK56 (Power-SO8) package, also known as SOT-669.
Yes, the device is listed as RoHS3 compliant (unverified).
The maximum gate threshold voltage (VGS(th)) is 2.1 V at ID = 1 mA.