BUK9Y153-100E,115 N-Channel logic level MOSFET with 100V drain-source voltage rating and 9.4A continuous drain current. Housed in an LFPAK56 surface-mount package.
Mfr Part #:

BUK9Y153-100E,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
N-Channel logic level MOSFET with 100V drain-source voltage rating and 9.4A continuous drain current. Housed in an LFPAK56 surface-mount package.
✓ Total Stock: 4,500 pcs
$ Price Range: $0.17 - $0.87

BUK9Y153-100E,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,500 pcs
4500 pcs On Request 1 On Request On Request On Request On Request On Request

BUK9Y153-100E,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BUK9Y153-100E,115 Description

Short technical summary and product information.

The BUK9Y153-100E is an N-channel logic level MOSFET designed and qualified to AEC Q101 standard for automotive applications. This device uses TrenchMOS technology to deliver a drain-source voltage rating of 100V and a continuous drain current of 9.4A at 5V gate drive. The on-state resistance is typically 122mΩ and maximum 153mΩ at VGS=5V and ID=2A.

 

This MOSFET is suitable for thermally demanding environments with a junction temperature range of -55°C to 175°C and a total power dissipation of 37W at 25°C case temperature. The logic level gate threshold voltage of 2.1V maximum allows direct drive from low-voltage logic, and the gate charge of 6.8nC enables fast switching. The LFPAK56 (SOT-669) package is a surface-mount Power-SO8 design with 4 leads and a mounting base connected to the drain.

 

Applications include 12V, 24V and 48V automotive systems such as motor control, lamp and solenoid drivers, transmission control, and ultra high performance power switching. The device is repetitive avalanche rated and compliant with AEC Q101.

BUK9Y153-100E,115 Quick Information

Product Type: N-Channel MOSFET
Series: BUK9
Canonical Name: BUK9Y153-100E N-channel 100V 153mΩ logic level MOSFET in LFPAK56
Subcategory: Single MOSFET

BUK9Y153-100E,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUK9Y153-100E,115 Estimated Pricing

Qty Low High
1+ $0.87 $0.87
10+ $0.54 $0.54
100+ $0.35 $0.35
500+ $0.27 $0.27
1,000+ $0.23 $0.23
1,500+ $0.21 $0.21
3,000+ $0.18 $0.18
9,000+ $0.17 $0.17
24,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUK9Y153-100E,115 Features

  • N-Channel logic level TrenchMOS MOSFET.
  • 100V drain-source voltage rating.
  • 9.4A continuous drain current.
  • 153mΩ maximum on-state resistance.
  • AEC Q101 qualified for automotive use.

BUK9Y153-100E,115 Applications

  • Designed for 12V/24V/48V automotive systems.
  • Ideal for motor and solenoid control.
  • Used in transmission control modules.
  • Suitable for high performance power switching.

BUK9Y153-100E,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The maximum drain-source voltage is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9.4A at VGS=5V and case temperature 25°C.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

What package is this MOSFET available in?

The device is offered in a surface-mount LFPAK56 (SOT-669) package with 4 leads.

Is this device RoHS compliant?

The RoHS status is reported as RoHS3 Compliant, but unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.1V at ID=1mA.

What is the on-state resistance?

The typical on-state resistance is 122mΩ and maximum is 153mΩ at VGS=5V and ID=2A.

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