BUK9Y104-100B,115 N-channel TrenchMOS logic level FET with 100V drain-source voltage and 14.8A drain current. Suitable for automotive and general purpose power switching applications.
Mfr Part #:

BUK9Y104-100B,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
N-channel TrenchMOS logic level FET with 100V drain-source voltage and 14.8A drain current. Suitable for automotive and general purpose power switching applications.
✓ Total Stock: 25,020 pcs
$ Price Range: $0.27 - $1.19

BUK9Y104-100B,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
25,020 pcs
25020 pcs On Request 1 On Request On Request On Request On Request On Request

BUK9Y104-100B,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BUK9Y104-100B,115 Description

Short technical summary and product information.

The BUK9Y104-100B is an N-channel enhancement mode Field-Effect Transistor (FET) from Nexperia, fabricated using TrenchMOS technology. It is designed for logic level gate drive sources and is qualified to the AEC standard Q101 for automotive applications.

 

Key electrical specifications include a drain-source voltage (Vdss) of 100V, a continuous drain current of 14.8A at 25°C case temperature, and a maximum drain-source on-resistance of 99mOhm at Vgs=10V and Id=5A. The device features a typical gate charge of 11nC and an input capacitance of 1139pF, enabling efficient switching performance.

 

The MOSFET is housed in a surface-mount LFPAK56 package (SOT-669) and supports an operating junction temperature range of -55°C to 175°C. It is suitable for thermally demanding environments and is designed for use in 12V, 24V, and 42V automotive systems, DC-to-DC converters, solenoid drivers, and general purpose power switching.

BUK9Y104-100B,115 Quick Information

Product Type: MOSFET
Series: BUK9Y104-100B
Canonical Name: BUK9Y104-100B N-channel TrenchMOS logic level FET
Subcategory: Single MOSFET

BUK9Y104-100B,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUK9Y104-100B,115 Estimated Pricing

Qty Low High
1+ $1.19 $1.19
10+ $0.75 $0.75
100+ $0.49 $0.49
500+ $0.38 $0.38
1,000+ $0.33 $0.33
1,500+ $0.30 $0.30
3,000+ $0.27 $0.27
24,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUK9Y104-100B,115 Features

  • N-channel TrenchMOS logic level FET.
  • 100V drain-source voltage rating.
  • 14.8A continuous drain current.
  • 99mOhm max on-resistance at 10V.
  • AEC Q101 qualified for automotive use.

BUK9Y104-100B,115 Applications

  • Suitable for 12V, 24V, and 42V loads.
  • Used in automotive electronic systems.
  • Ideal for DC-to-DC converter circuits.
  • Designed for general purpose power switching.
  • Applicable for solenoid driver circuits.

BUK9Y104-100B,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BUK9Y104-100B?

The maximum drain-source voltage (Vdss) is 100V.

What is the maximum continuous drain current?

The maximum continuous drain current is 14.8A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the BUK9Y104-100B available in?

It is available in a surface-mount LFPAK56 package, also known as SOT-669.

Is the BUK9Y104-100B RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified.

What is the maximum on-resistance at 10V gate drive?

The maximum drain-source on-resistance is 99mOhm at Vgs=10V and Id=5A.

Is this MOSFET suitable for automotive applications?

Yes, it is AEC Q101 compliant, making it suitable for automotive applications.

Home
Account

Categories