| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,570 pcs
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7570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BUK98150-55A/CU is a logic level N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. This component is qualified for use in automotive critical applications.
Key electrical characteristics include a maximum drain-source voltage of 55V and a continuous drain current of 5.5A at 25°C. The FET exhibits low conduction losses due to its low on-state resistance, with values as low as 116 mΩ at VGS = 10V and ID = 5A. It also features a non-repetitive drain-source avalanche energy rating of 22 mJ.
Designed for 12V and 24V loads, the BUK98150-55A/CU is suitable for applications such as motors, lamps, and solenoids. Its logic level gate drive makes it compatible with low-voltage control sources.
The device is housed in an SC-73 (SOT223) plastic surface-mounted package with an increased heatsink. This package type is suitable for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 55V.
The maximum continuous drain current is 5.5A at 25°C.
The typical on-state resistance is 116 mΩ at VGS = 10V and ID = 5A.
It is supplied in an SC-73 (SOT223) plastic surface-mounted package.
