| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
1,037 pcs
|
1037 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The Nexperia BUK9610-100B is a logic level N-channel enhancement mode Field-Effect Transistor (FET) manufactured using TrenchMOS technology. This device is AEC Q101 compliant and suitable for automotive critical applications, as well as general purpose power switching.
Key electrical specifications include a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 75 A. The drain-source on-state resistance (RDSon) is as low as 8.3 mΩ at VGS = 10V and 25A, and 8.6 mΩ at VGS = 5V and 25A, contributing to low conduction losses. The FET is designed for logic level gate drive sources and can handle thermally demanding environments due to its 175 °C rating.
Applications for the BUK9610-100B include 12 V, 24 V, and 42 V loads, automotive systems, motors, lamps, and solenoids. It is packaged in a D2PAK surface-mount plastic package with 3 leads.
This MOSFET offers features such as low conduction losses due to its low on-state resistance and suitability for logic level gate drive sources. Its robust design makes it suitable for thermally demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
75A at 25°C case temperature, limited by package.
9.7mΩ maximum at VGS=10V and ID=25A.
D2PAK (TO-263) surface mount package.
300W at 25°C case temperature.
32nC maximum.
629mJ non-repetitive.
