| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BUK7M27-80EX is an N-channel standard level MOSFET from Nexperia, fabricated using TrenchMOS technology. It is rated for a drain-source voltage of 80 V and a continuous drain current of 30 A at 25°C case temperature. The device offers a low typical on-resistance of 22 mOhm (maximum 27 mOhm) at VGS=10V, ensuring efficient power switching.
Designed for demanding environments, the MOSFET operates over a junction temperature range of -55°C to 175°C and is qualified to AEC-Q101 for automotive applications. The gate threshold voltage is 4 V maximum, and the gate can be driven up to ±20 V. Dynamic characteristics include a typical gate charge of 19.5 nC and input capacitance of 1306 pF.
This MOSFET is housed in a compact LFPAK33 (SOT1210-8) surface-mount package, which offers excellent thermal performance. It is suitable for 12 V, 24 V, and 48 V automotive systems, motor and solenoid control, transmission control, and general high-performance power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.36 | $1.36 |
| 10+ | $0.85 | $0.85 |
| 100+ | $0.56 | $0.56 |
| 500+ | $0.44 | $0.44 |
| 1,000+ | $0.38 | $0.38 |
| 1,500+ | $0.34 | $0.34 |
| 3,000+ | $0.32 | $0.32 |
| 9,000+ | $0.30 | $0.30 |
| 24,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 80 V.
The maximum drain current (ID) is 30 A at 25°C case temperature, and 21.3 A at 100°C.
The typical drain-source on-resistance is 22 mOhm, with a maximum of 27 mOhm at VGS=10V and ID=5A.
The operating junction temperature range is -55°C to 175°C.
The MOSFET is housed in a surface-mount LFPAK33 (SOT1210-8) package.
The part is marked as RoHS3 Compliant, but this status is unverified. The datasheet indicates AEC-Q101 qualification but does not confirm RoHS.
The maximum total gate charge (Qg) is 19.5 nC at VGS=10V, ID=5A, VDS=64V.