| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,496 pcs
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1496 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BUK7K6R2-40E is a dual N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D package. This AEC Q101 qualified component is designed for high-performance automotive applications, including 12V systems, motor control, and power switching.
Key electrical characteristics include a drain-source voltage rating of 40V and a maximum continuous drain current of 40A at 25°C. The on-state resistance (RDSon) is as low as 5.8 mΩ at 25°C with a gate-source voltage of 10V, ensuring efficient power transfer. The device is suitable for thermally demanding environments with a high junction temperature rating of 175°C.
This MOSFET is designed for standard level gate drive and features repetitive avalanche rating. Its LFPAK56D package provides a compact footprint for surface mounting, making it suitable for space-constrained designs. The true standard level gate with VGS(th) greater than 1V at 175°C simplifies drive requirements.
Applications include transmission control, solenoid control, and ultra-high performance power switching. The dual MOSFET configuration allows for increased design flexibility and potential space savings in certain circuit topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
40A at 25°C case temperature with VGS=10V.
5.8mΩ maximum at VGS=10V, ID=20A, Tj=25°C.
68W maximum at 25°C case temperature.
SOT1205 surface-mount package.
-55°C to 175°C.
32.3nC typical.