BUK6Y33-60PX P-Channel MOSFET rated at 60V drain-source voltage and 30A continuous drain current. Packaged in surface-mount LFPAK56 (SOT-669).
Mfr Part #:

BUK6Y33-60PX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
P-Channel MOSFET rated at 60V drain-source voltage and 30A continuous drain current. Packaged in surface-mount LFPAK56 (SOT-669).
✓ Total Stock: 4,030 pcs
$ Price Range: $0.51 - $1.89

BUK6Y33-60PX Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,030 pcs
4030 pcs On Request 1 On Request On Request On Request On Request On Request

BUK6Y33-60PX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BUK6Y33-60PX Description

Short technical summary and product information.

The BUK6Y33-60PX is a P-channel enhancement mode MOSFET from Nexperia USA Inc., manufactured using Trench MOSFET technology. It is designed for automotive applications and is AEC-Q101 qualified. The device offers a drain-source voltage rating of 60V and can handle continuous drain currents up to 30A (at 25°C case temperature). On-resistance is typically 26mOhm with a maximum of 33mOhm at VGS = -10V and ID = -7A.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum, input capacitance of 2590pF at VDS = 30V, and total gate charge of 69nC at VGS = 10V. The device also features an ESD rating of 1000V HBM and non-repetitive avalanche energy of 85mJ. It operates over a junction temperature range of -55°C to 175°C.

 

The MOSFET is housed in an LFPAK56 (SOT-669) surface-mount package, also referred to as Power-SO8. This package is designed for high power dissipation, with a maximum power dissipation of 110W at 25°C case temperature. The part is suitable for applications such as reverse battery protection, high-side load switching, motor drive, and general power management.

BUK6Y33-60PX Quick Information

Product Type: MOSFET
Canonical Name: BUK6Y33-60PX
Subcategory: P-Channel MOSFET

BUK6Y33-60PX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BUK6Y33-60PX Estimated Pricing

Qty Low High
1+ $1.89 $1.89
10+ $1.21 $1.21
100+ $0.81 $0.81
500+ $0.64 $0.64
1,000+ $0.56 $0.56
1,500+ $0.51 $0.51
3,000+ $0.51 $0.51

Estimated market price range - modelled values for guidance only, not live distributor offers.

BUK6Y33-60PX Features

  • P-channel Trench MOSFET technology.
  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 30A.
  • Typical on-resistance of 26mOhm.
  • AEC-Q101 qualified for automotive use.

BUK6Y33-60PX Applications

  • Used in reverse battery protection circuits.
  • Suitable for high-side load switching.
  • Ideal for motor drive applications.
  • Power management in automotive systems.

BUK6Y33-60PX FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BUK6Y33-60PX?

60V maximum.

What package is the BUK6Y33-60PX available in?

Surface-mount LFPAK56 (SOT-669) package, also known as Power-SO8.

What is the operating temperature range?

Junction temperature range from -55°C to 175°C.

Is the BUK6Y33-60PX RoHS compliant?

It is listed as RoHS3 Compliant (unverified).

What is the typical on-resistance?

Typical 26mOhm at VGS = -10V, ID = -7A, maximum 33mOhm.

What is the gate threshold voltage?

Maximum 3V at ID = 250uA.

Is the MOSFET AEC-Q101 qualified?

Yes, it is qualified to AEC-Q101 standard.

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