| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUH315D from STMicroelectronics is a high voltage, fast-switching NPN power transistor featuring an integrated freewheeling diode. Manufactured using Multiepitaxial Mesa technology with a Hollow Emitter structure, it offers cost-effective high performance and enhanced switching speeds.
Key electrical specifications include a maximum Collector-Emitter Voltage (VCEO) of 700V and a continuous Collector Current (IC) of 6A. The device has a maximum Total Power Dissipation (Ptot) of 44W at 25°C. It also features a typical Collector-Emitter Saturation Voltage (VCE(sat)) of 1.5V and a typical DC Current Gain (hFE) of 4 at 3A.
Designed for applications such as horizontal deflection circuits in televisions and monitors, the BUH315D is housed in an ISOWATT218 package. It supports through-hole mounting and operates within a junction temperature range of -65°C to 150°C.
This transistor is suitable for high-voltage switching applications where fast switching characteristics and integrated freewheeling protection are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the BUH315D is 700V.
The maximum continuous Collector Current (IC) for the BUH315D is 6A.
The typical Collector-Emitter Saturation Voltage (VCE(sat)) is 1.5V at IC=3A and IB=1A.
The BUH315D is supplied in an ISOWATT218 package.
The maximum power dissipation (Ptot) is 44W at 25°C.
The typical fall time (tf) with an inductive load is 350ns.