| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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144 pcs
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144 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD244 is a PNP Epitaxial Silicon Transistor manufactured by Texas Instruments, designed for medium power linear and switching applications. This transistor is the complement to the BD243 series.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) ranging from -45V for the BD244 up to -100V for the BD244C. The continuous Collector Current (IC) is rated at -6A, with a pulse capability of -10A. The Base Current (IB) maximum is -2A. The Collector Dissipation (PC) at 25°C is 65W.
Electrical characteristics such as Collector-Emitter Sustaining Voltage (VCEO(sus)) vary by variant, with values from -45V to -100V. The DC Current Gain (hFE) is a minimum of 30 and typically 15 under specified conditions. Collector Emitter Saturation Voltage (VCE(sat)) is a maximum of -1.5V, and Base Emitter On Voltage (VBE(on)) is a maximum of -2V.
The transistor is housed in a TO-220 package and is suitable for through-hole mounting. It operates within a Junction Temperature range of -65°C to 150°C and a Storage Temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -45V.
The maximum continuous collector current is -6A.
The BD244 is available in a TO-220 package.
The maximum junction temperature is 150°C.
The storage temperature range is -65°C to +150°C.
The minimum DC current gain is 30 at VCE = -4V and IC = -0.3A.
The collector power dissipation is 65W at a case temperature of 25°C.