| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BU100A is an NPN silicon transistor from STMicroelectronics, housed in a TO3 package. This component offers a maximum collector-emitter voltage (Vce) of 100V and a maximum collector current (Ic) of 10A. Its maximum collector power dissipation is rated at 30W.
Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 40 and a maximum of 90, with a typical minimum hFE of 50. The transition frequency (fT) is a minimum of 100MHz. The operating temperature range is up to 150°C, with a maximum operating junction temperature of 200°C.
This transistor is suitable for applications requiring robust power handling and specific voltage and current ratings. The TO3 package is designed for through-hole mounting and typically requires appropriate heatsinking for thermal management.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the BU100A is 100V.
The maximum collector current (Ic) for the BU100A is 10A.
The BU100A comes in a TO3 package.
The maximum operating temperature for the BU100A is 150°C.
The minimum forward current transfer ratio (hFE) of the BU100A is 40.