| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,795 pcs
|
17795 pcs | On Request | 1 | On Request | On Request | 1541+ | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Infineon BSZ068N06NS is an N-channel OptiMOSTM power transistor designed for high-performance switched-mode power supplies (SMPS) and synchronous rectification applications.
This MOSFET features a maximum drain-source voltage (VDS) of 60V and a low on-state resistance (RDS(on)) of 6.8 mΩ at a gate-source voltage (VGS) of 10V and a continuous drain current (ID) of 63A at 25°C case temperature. It is 100% avalanche tested and offers superior thermal resistance.
The device is qualified according to JEDEC standards for target applications. It is supplied in a TSDSON-8 FL package and is RoHS compliant, Pb-free lead-plated, and halogen-free.
Key electrical parameters include a maximum pulsed drain current of 252A, a gate-source voltage range of ±20V, and output charge (QOSS) of 19 nC. The maximum power dissipation is 46W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSZ068N06NS is 60V.
The maximum on-resistance (RDS(on)) is 6.8 mΩ when VGS is 10V and ID is 63A.
The continuous drain current (ID) is 63A at 25°C case temperature with a VGS of 10V.
The BSZ068N06NS is supplied in a TSDSON-8 FL package.
Yes, the BSZ068N06NS is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, it features Pb-free lead plating and is halogen-free.