| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,050 pcs
|
3050 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
1,751 pcs
|
1751 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon BSZ013NE2LS5I is an N-channel OptiMOSTM 5 Power MOSFET designed for high-performance buck converters. It features a 25V drain-source voltage and a very low on-resistance of 1.3 mΩ at VGS=4.5V. The MOSFET offers a maximum continuous drain current of 186A at TC=25°C and includes a monolithic integrated Schottky-like diode.
This device is 100% avalanche tested and is qualified according to JEDEC standards for target applications. It is supplied in a PG-TSDSON-8 FL package, suitable for surface mounting. The component is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.
Key electrical parameters include a maximum pulsed drain current of 744A, a maximum avalanche current of 20A, and a maximum avalanche energy of 90 mJ. The gate source voltage range is -16V to +16V. Power dissipation is rated at 69W at TC=25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) for the BSZ013NE2LS5I is 25V.
The maximum continuous drain current (ID) is 186A at TC=25°C with VGS=10V, and 162A at TC=25°C with VGS=4.5V.
The maximum on-resistance (RDS(on)) is 1.3 mΩ when the gate-source voltage (VGS) is 4.5V.
The BSZ013NE2LS5I is supplied in a PG-TSDSON-8 FL package.
Yes, the BSZ013NE2LS5I is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the BSZ013NE2LS5I is Halogen-free according to IEC61249-2-21.
