| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,987 pcs
|
6987 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon BSP297 is a high-performance N-Channel MOSFET belonging to the SIPMOS family. Designed for logic-level gate drive, this enhancement mode device offers a drain-source breakdown voltage of 200V and a continuous drain current of up to 0.66A at 25°C.
Key electrical characteristics include a low drain-source on-state resistance, with a typical value of 1.8 Ohms at VGS=10V and ID=0.66A, and 1.2 Ohms at VGS=4.5V and ID=0.53A. The device also features a gate threshold voltage typically around 1.4V.
Packaged in a PG-SOT223 surface-mount case, the BSP297 is suitable for various electronic circuits requiring efficient switching and signal amplification. It operates within a wide temperature range of -55°C to +150°C.
This MOSFET is Pb-free and Halogen-free, complying with environmental standards. It is qualified according to AEC Q101.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the BSP297 is 200V.
The typical gate threshold voltage for the BSP297 is 1.4V.
The maximum continuous drain current for the BSP297 at 25°C is 0.66A.
The typical drain-source on-state resistance at VGS=10V and ID=0.66A is 1 Ohm.
The BSP297 is supplied in a PG-SOT223 package.
The BSP297 is RoHS3 Compliant.
The Moisture Sensitivity Level for the BSP297 is 1 Unlimited.