BST82,215 N-Channel MOSFET with 100V drain-source voltage, 190mA continuous drain current, and 10 Ohm on-resistance in a surface-mount SOT-23 package.
Mfr Part #:

BST82,215

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
N-Channel MOSFET with 100V drain-source voltage, 190mA continuous drain current, and 10 Ohm on-resistance in a surface-mount SOT-23 package.
✓ Total Stock: 370,020 pcs
$ Price Range: $0.10 - $0.63

BST82,215 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
304,020 pcs
304020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
66,000 pcs
66000 pcs On Request 1 On Request On Request 25+ On Request On Request

BST82,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BST82,215 Description

Short technical summary and product information.

The BST82,215 is an N-channel enhancement mode MOSFET from Nexperia, designed for low-power switching and signal amplification applications. It features a drain-source voltage rating of 100 V and a continuous drain current of 190 mA at 25°C ambient temperature. The on-resistance is typically 10 Ohm at 150 mA gate drive of 5 V. The gate threshold voltage is 2 V maximum at 1 mA drain current, ensuring low voltage operation. The device can handle up to 830 mW power dissipation at case temperature and operates over a wide junction temperature range from -65°C to 150°C. It is supplied in a surface-mount TO-236AB (SOT-23) package, suitable for compact PCB layouts. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited), though compliance data is unverified. Typical applications include load switching, DC-DC converters, and general purpose amplification in consumer, industrial, and automotive electronics.

BST82,215 Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: BST82,215
Subcategory: Single MOSFET

BST82,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BST82,215 Estimated Pricing

Qty Low High
1+ $0.63 $0.63
10+ $0.43 $0.43
100+ $0.32 $0.32
500+ $0.22 $0.22
1,000+ $0.17 $0.17
3,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BST82,215 Features

  • N-channel MOSFET with 100V drain-source voltage.
  • 190mA continuous drain current rating.
  • 10 Ohm maximum on-resistance at 5V gate drive.
  • Surface-mount SOT-23 package (TO-236AB).
  • Wide operating temperature range -65°C to 150°C.

BST82,215 Applications

  • Low-power load switching and power management.
  • Signal amplification in sensor interfaces.
  • DC-DC converter and voltage regulator circuits.
  • Battery management and protection circuits.

BST82,215 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BST82,215?

The drain-source voltage (Vdss) is 100 V.

What is the continuous drain current rating?

The continuous drain current (Id) is 190 mA at 25°C ambient temperature.

What is the maximum on-resistance?

The maximum on-resistance (Rds(on)) is 10 Ohm at Id=150 mA and Vgs=5 V.

What is the operating temperature range?

The operating junction temperature range is -65°C to 150°C.

What package does the BST82,215 come in?

The device is supplied in TO-236-3, SC-59, SOT-23-3 (surface-mount) packages, with supplier device package TO-236AB.

Is the BST82,215 RoHS compliant?

RoHS3 compliance is indicated but unverified; treat as low confidence.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 2 V at Id=1 mA.

Home
Account

Categories