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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BST62,115 is a PNP Darlington transistor manufactured by Nexperia USA Inc. It is designed for general-purpose switching and amplification applications requiring high current gain. The device combines two PNP transistors in a Darlington configuration to achieve a minimum DC current gain (hFE) of 2000 at 500mA collector current and 10V collector-emitter voltage.
Key electrical ratings include a collector-emitter voltage (Vceo) of 80V, a continuous collector current (Ic) of 1A, and a power dissipation of 1.3W. The transistor has a transition frequency (ft) of 200 MHz, making it suitable for moderate-speed switching. The maximum collector-emitter saturation voltage is 1.3V at 500µA base current and 500mA collector current.
The BST62,115 is offered in a surface-mount TO-243AA package, which is equivalent to the SOT-89 footprint. This package is suitable for automated assembly and is commonly used in compact electronic designs. The device can operate at a junction temperature up to 150°C.
Typical applications include driver stages in relay and solenoid circuits, power supply control, and other circuits where high current gain is beneficial. The Darlington configuration simplifies drive requirements by reducing the base current needed to switch the load.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
| 10+ | $0.87 | $0.87 |
| 100+ | $0.59 | $0.59 |
| 500+ | $0.39 | $0.39 |
| 1,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BST62,115 has a collector-emitter voltage (Vceo) rating of 80V.
The BST62,115 is available in a surface-mount TO-243AA package, which is equivalent to the SOT-89 footprint.
The maximum operating junction temperature is 150°C.
The BST62,115 is listed as RoHS3 compliant, but this status is unverified. Please verify with the manufacturer or distributor.
The minimum DC current gain (hFE) is 2000 at Ic=500mA and Vce=10V.
The maximum collector-emitter saturation voltage is 1.3V at Ib=500µA and Ic=500mA.
The transition frequency (ft) is 200 MHz.