| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS87,115 is an N-Channel enhancement mode MOSFET manufactured by Nexperia USA Inc. using MOSFET (Metal Oxide) technology. It is designed for medium-voltage switching applications requiring up to 200V drain-source voltage and 400mA continuous drain current.
Key electrical characteristics include a maximum drain-source on-state resistance of 3 Ohm at 400mA and 10V gate drive, a maximum gate threshold voltage of 2.8V at 1mA drain current, and a maximum gate-source voltage of ±20V. The device features an input capacitance of 120 pF at 25V drain-source bias.
The MOSFET is rated for a maximum power dissipation of 580mW at 25°C ambient temperature and 12.5W at 25°C case temperature. It operates over a junction temperature range of -55°C to 150°C. The device is supplied in a surface-mount TO-243AA package (SOT-89) and is RoHS3 and REACH compliant.
200V
400mA
3 Ohm maximum at 400mA drain current and 10V gate-source voltage
TO-243AA (SOT-89) surface mount package
-55°C to 150°C junction temperature
Yes, RoHS3 compliant