BSS84AKW,115 P-Channel enhancement mode MOSFET with 50V drain-source voltage and 150mA continuous drain current in a SOT323 (SC-70) surface-mount package.
Mfr Part #:

BSS84AKW,115

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
P-Channel enhancement mode MOSFET with 50V drain-source voltage and 150mA continuous drain current in a SOT323 (SC-70) surface-mount package.
✓ Total Stock: 1,219,293 pcs
$ Price Range: $0.04 - $0.24

BSS84AKW,115 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,219,020 pcs
1219020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
273 pcs
273 pcs On Request 1 On Request On Request On Request On Request On Request

BSS84AKW,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSS84AKW,115 Description

Short technical summary and product information.

The BSS84AKW is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia using Trench MOSFET technology. It is designed for logic-level compatible operation and offers very fast switching performance. The device is housed in a small SOT323 (SC-70) surface-mount plastic package, making it suitable for space-constrained applications.

 

Key electrical specifications include a maximum drain-source voltage of 50V, a continuous drain current of 150mA at 25°C, and a maximum drain-source on-resistance of 7.5 Ohms at VGS = -10V and ID = -100mA. The gate-source voltage range is ±20V, and the gate threshold voltage is a maximum of 2.1V at ID = 250µA. The device also features ESD protection up to 1kV (HBM) and is AEC-Q101 qualified for automotive applications.

 

Typical applications include relay drivers, high-speed line drivers, high-side load switches, and general switching circuits. The MOSFET is rated for an operating junction temperature range of -55°C to +150°C and a storage temperature range of -65°C to +150°C.

BSS84AKW,115 Quick Information

Product Type: P-Channel MOSFET
Series: BSS84
Canonical Name: BSS84AKW P-Channel 50V 150mA Trench MOSFET
Subcategory: Single MOSFETs

BSS84AKW,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS84AKW,115 Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.14 $0.14
100+ $0.09 $0.09
500+ $0.06 $0.06
1,000+ $0.06 $0.06
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS84AKW,115 Features

  • P-channel Trench MOSFET technology.
  • 50V drain-source voltage rating.
  • 150mA continuous drain current.
  • AEC-Q101 qualified for automotive.
  • ESD protection up to 1kV HBM.

BSS84AKW,115 Applications

  • Ideal for relay driver circuits.
  • Used in high-speed line drivers.
  • Suitable for high-side load switches.
  • General purpose switching applications.

BSS84AKW,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSS84AKW?

The maximum drain-source voltage is 50V.

What is the continuous drain current rating?

The continuous drain current is 150mA at 25°C with VGS = -10V.

What package is the BSS84AKW available in?

It is available in a SOT323 (SC-70) surface-mount package.

Is the BSS84AKW qualified for automotive applications?

Yes, it is AEC-Q101 qualified.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Does the BSS84AKW have ESD protection?

Yes, it has ESD protection up to 1kV (HBM).

What is the maximum drain-source on-resistance?

The maximum on-resistance is 7.5 Ohms at VGS = -10V and ID = -100mA.

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