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BSS63,215 PNP bipolar transistor, 100V collector-emitter voltage, 100mA collector current, 250mW power dissipation, surface mount TO-236AB package.
Mfr Part #:

BSS63,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
PNP bipolar transistor, 100V collector-emitter voltage, 100mA collector current, 250mW power dissipation, surface mount TO-236AB package.
✓ Total Stock: 25,020 pcs
$ Price Range: $0.04 - $0.24

BSS63,215 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
25,020 pcs
On Request
25020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS63,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BSS63,215 Description

Short technical summary and product information.

The BSS63,215 is a PNP bipolar junction transistor manufactured by Nexperia. It offers a collector-emitter breakdown voltage of 100V and a continuous collector current of 100mA. With a DC current gain (hFE) of 30 minimum at 25mA and a transition frequency of 85MHz, this transistor is suitable for general-purpose switching and amplification applications. It is housed in a surface-mount TO-236AB package (also known as SOT-23 or SC-59), allowing for compact PCB layouts. The device has a power dissipation of 250mW and an operating junction temperature up to 150°C. This transistor is RoHS compliant and has an MSL rating of 1 (unlimited). It is commonly used in low-power circuits where space is limited.

BSS63,215 Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: PNP Bipolar Transistor, 100V Vceo, 100mA Ic, TO-236AB
Subcategory: PNP Transistor

BSS63,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS63,215 Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.19 $0.19
100+ $0.12 $0.12
500+ $0.08 $0.08
1,000+ $0.07 $0.07
3,000+ $0.07 $0.07
6,000+ $0.06 $0.06
9,000+ $0.05 $0.05
24,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS63,215 Features

  • PNP bipolar transistor with 100V Vceo rating.
  • 100mA continuous collector current capacity.
  • 85MHz transition frequency for moderate-speed switching.
  • Surface-mount SOT-23 (TO-236AB) package.
  • RoHS3 compliant with MSL level 1.

BSS63,215 Applications

  • Used in general-purpose switching circuits.
  • Ideal for signal amplification in low-power designs.
  • Suitable for load driving in portable electronics.

BSS63,215 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BSS63,215?

The Vceo is 100V.

What package is the BSS63,215 available in?

It comes in a TO-236-3, SC-59, SOT-23-3 surface-mount package, with the supplier device package being TO-236AB.

What is the operating temperature range of the BSS63,215?

The maximum junction temperature is 150°C.

Is the BSS63,215 RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this data is unverified.

What is the DC current gain (hFE) of the BSS63,215?

Minimum hFE of 30 at Ic=25mA, Vce=1V.

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