| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS192,115 is a P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D-MOSFET) from Nexperia USA Inc. It is designed for medium power applications and is housed in a surface-mount SOT-89 (SC-62) plastic package with flat leads. Key electrical specifications include a maximum drain-source voltage of 240V, a continuous drain current of 200mA at 25°C ambient, and a typical drain-source on-resistance of 10 Ohm at Vgs = -10V. The device features a maximum gate threshold voltage of 2.8V and can be driven by 10V logic. It offers low input capacitance of 90pF, enabling fast switching performance. The MOSFET is suitable for high-side load switching, relay drivers, high-speed line drivers, and general switching circuits. Its maximum power dissipation is 560mW at ambient temperature and 12.5W at case temperature, with an operating junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Surface mount SOT-89 (TO-243AA equivalent).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
240V maximum.
200mA at 25°C ambient.
2.8V maximum at Id = 1mA.
10 Ohm typical, 12 Ohm maximum at Vgs = -10V, Id = -200mA.