BSS138W The Microdiode Electronics BSS138W is an N-Channel MOSFET designed for efficient switching applications. It offers a 50V drain-source voltage and 200mA continuous drain current.
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BSS138W

Available from 1 distributors
Mfr Name: Microdiode Electronics
Microdiode Electronics
The Microdiode Electronics BSS138W is an N-Channel MOSFET designed for efficient switching applications. It offers a 50V drain-source voltage and 200mA continuous drain current.
✓ Total Stock: 2,900 pcs
$ Price Range: $0.99

BSS138W Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,900 pcs
2900 pcs On Request 1 On Request On Request On Request On Request On Request

BSS138W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSS138W Description

Short technical summary and product information.

The BSS138W from Microdiode Electronics is an N-Channel enhancement mode field-effect transistor. It is designed for applications requiring low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds.

 

Key electrical characteristics include a drain-source breakdown voltage of 50V, a continuous drain current of 200mA, and a gate threshold voltage typically around 1.2V. The static drain-source on-resistance is typically 1.4Ω at a gate-source voltage of 10V and a drain current of 0.22A. Dynamic characteristics include an input capacitance of 50pF and an output capacitance of 25pF.

 

This MOSFET is housed in a compact SOT-323 package, making it suitable for space-constrained designs. The surface-mount package requires appropriate soldering techniques for reliable termination. It operates within a temperature range of -55°C to +150°C.

 

The BSS138W is also available in a lead-free version, catering to environmental regulations and specific manufacturing requirements.

BSS138W Quick Information

Product Type: N-Channel MOSFET
Canonical Name: BSS138W N-Channel Enhancement Mode Field Effect Transistor
Subcategory: N-Channel

BSS138W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

BSS138W Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS138W Features

  • N-Channel enhancement mode MOSFET.
  • 50V drain-source breakdown voltage.
  • 200mA continuous drain current.
  • Low on-resistance, typically 1.4Ω.
  • Compact SOT-323 surface mount package.

BSS138W Applications

  • Suitable for general switching applications.
  • Ideal for low-power electronic circuits.
  • Used in portable electronic devices.
  • Applicable in power management circuits.

BSS138W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the BSS138W?

The drain-source breakdown voltage is 50V minimum.

What is the continuous drain current for the BSS138W?

The continuous drain current is 200mA.

What is the typical static drain-source on-resistance of the BSS138W?

The typical static drain-source on-resistance is 1.4Ω.

What package type is the BSS138W available in?

The BSS138W is available in a SOT-323 package.

What is the operating temperature range for the BSS138W?

The operating and storage temperature range is -55°C to +150°C.

Is the BSS138W RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSS138W?

The Moisture Sensitivity Level is 1 Unlimited.

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