| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The BSS138W from Microdiode Electronics is an N-Channel enhancement mode field-effect transistor. It is designed for applications requiring low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds.
Key electrical characteristics include a drain-source breakdown voltage of 50V, a continuous drain current of 200mA, and a gate threshold voltage typically around 1.2V. The static drain-source on-resistance is typically 1.4Ω at a gate-source voltage of 10V and a drain current of 0.22A. Dynamic characteristics include an input capacitance of 50pF and an output capacitance of 25pF.
This MOSFET is housed in a compact SOT-323 package, making it suitable for space-constrained designs. The surface-mount package requires appropriate soldering techniques for reliable termination. It operates within a temperature range of -55°C to +150°C.
The BSS138W is also available in a lead-free version, catering to environmental regulations and specific manufacturing requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 50V minimum.
The continuous drain current is 200mA.
The typical static drain-source on-resistance is 1.4Ω.
The BSS138W is available in a SOT-323 package.
The operating and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.