| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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23,002 pcs
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23002 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,415 pcs
|
5415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
503 pcs
|
503 pcs | On Request | 1 | On Request | On Request | 1725+ | On Request | On Request |
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| Technology |
The Nexperia BSS138PS is a dual N-channel MOSFET array housed in a compact SOT-363-6 package, suitable for surface mount technology. This component offers a drain-source breakdown voltage of 60V and a continuous drain current of 320mA. Its on-resistance is rated at 1.6 Ohms, with a gate-source threshold voltage of 900mV. The MOSFET operates with a gate-source voltage of up to 10V and has a gate charge of 0.8 nC. It is designed for enhancement mode channel operation and can function across a wide temperature range from -55°C to +150°C. The device has a power dissipation of 420mW and a minimum forward transconductance of 700mS. Its fall time is 4ns, making it suitable for various switching applications.
This MOSFET array is constructed using Silicon technology and is configured as a dual-channel device. The mounting style is surface mount, and it is supplied on a reel. The BSS138PS is part of Nexperia's MOSFET product line, offering reliable performance for electronic designs requiring efficient switching and amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 320mA.
The on-resistance is 1.6 Ohms.
The gate-source threshold voltage is 900mV.
The operating temperature range is -55°C to +150°C.
The BSS138PS is supplied in a SOT-363-6 package.
The BSS138PS is an N-Channel MOSFET.