BSS138DW-7-F The BSS138DW-7-F is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 50V drain-source voltage rating, 200mA continuous drain current, and low on-resistance of 3.5 Ohm.
Mfr Part #:

BSS138DW-7-F

Available from 6 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The BSS138DW-7-F is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 50V drain-source voltage rating, 200mA continuous drain current, and low on-resistance of 3.5 Ohm.
✓ Total Stock: 575,029 pcs
$ Price Range: $0.06 - $0.44

BSS138DW-7-F Available from 6 distributors

✓ Authorised
✓ Non-Authorised

BSS138DW-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
Weight

BSS138DW-7-F Description

Short technical summary and product information.

The BSS138DW-7-F is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It integrates two independent N-channel MOSFETs in a single SOT-363 surface mount package, making it suitable for space-constrained designs requiring multiple switching elements.

 

Key electrical specifications include a drain-source voltage (Vdss) of 50V, continuous drain current of 200mA, and a maximum on-resistance of 3.5 Ohm at VGS=10V. The device features a logic level gate with a maximum gate threshold voltage of 1.5V at ID=250µA, enabling direct drive from low-voltage logic. Input capacitance is typically 50pF at VDS=10V, supporting fast switching speeds.

 

The MOSFET is housed in a molded plastic SOT-363 case with a UL 94V-0 flammability rating. Terminals feature a matte tin finish annealed over an Alloy 42 leadframe, solderable per MIL-STD-202 Method 208. The device is rated for operation over a junction temperature range of -55°C to +150°C. It is totally lead-free, RoHS3 compliant, and halogen and antimony free.

BSS138DW-7-F Quick Information

Product Type: MOSFET Array
Series: BSS138DW
Canonical Name: BSS138DW-7-F Dual N-Channel Enhancement Mode Field Effect Transistor
Subcategory: MOSFET Arrays

BSS138DW-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: Yes

BSS138DW-7-F Estimated Pricing

Qty Low High
1+ $0.44 $0.44
10+ $0.26 $0.26
100+ $0.18 $0.18
500+ $0.15 $0.15
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS138DW-7-F Features

  • Dual N-channel MOSFET in SOT-363 package.
  • 50V drain-source voltage rating.
  • 200mA continuous drain current.
  • Low on-resistance of 3.5 Ohm.
  • Logic level gate threshold voltage.

BSS138DW-7-F Applications

  • Load switch for portable electronics.
  • Signal routing and multiplexing.
  • Low-power DC/DC converter circuits.
  • Battery management and protection.

BSS138DW-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSS138DW-7-F?

The maximum drain-source voltage (Vdss) is 50V.

What is the continuous drain current rating?

The continuous drain current is 200mA at TA=+25°C.

What is the on-resistance of the BSS138DW-7-F?

The maximum on-resistance is 3.5 Ohm at VGS=10V and ID=220mA.

What package does the BSS138DW-7-F come in?

It is supplied in a SOT-363 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the BSS138DW-7-F RoHS compliant?

Yes, it is fully RoHS3 compliant (EU Directive 2015/863/EU).

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