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BSS138BKS,115 Dual N-channel Trench MOSFET with 60V drain-source voltage and 320mA drain current. Housed in a 6-TSSOP (SOT363) surface-mount package.
Mfr Part #:

BSS138BKS,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
Dual N-channel Trench MOSFET with 60V drain-source voltage and 320mA drain current. Housed in a 6-TSSOP (SOT363) surface-mount package.
✓ Total Stock: 40,020 pcs
$ Price Range: $0.06 - $0.34

BSS138BKS,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
40,020 pcs
On Request
40020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS138BKS,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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BSS138BKS,115 Description

Short technical summary and product information.

The BSS138BKS,115 is a dual N-channel enhancement-mode Field-Effect Transistor (FET) from Nexperia, manufactured using Trench MOSFET technology. It is designed for high-speed switching applications and features logic-level gate compatibility, enabling direct drive from low-voltage logic circuits.

 

Key electrical specifications include a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage range of -20V to +20V, and a continuous drain current (ID) of 320mA at 25°C ambient (210mA at 100°C). The drain-source on-state resistance (RDS(on)) is typically 1.6Ω at VGS=10V and ID=320mA. The device also offers ESD protection up to 1.5kV and is AEC-Q101 qualified for automotive applications.

 

The BSS138BKS is available in a very small SOT363 (SC-88) surface-mount package, also known as 6-TSSOP, with a maximum power dissipation of 280mW per transistor (standard footprint) and 445mW per device. Its compact size and fast switching characteristics make it suitable for relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

BSS138BKS,115 Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N-Channel Trench MOSFET, 60V, 320mA, SOT363
Subcategory: Dual N-Channel

BSS138BKS,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS138BKS,115 Estimated Pricing

Qty Low High
1+ $0.34 $0.34
10+ $0.25 $0.25
100+ $0.16 $0.16
500+ $0.12 $0.12
1,000+ $0.10 $0.10
3,000+ $0.09 $0.09
6,000+ $0.08 $0.08
9,000+ $0.07 $0.07
24,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS138BKS,115 Features

  • Dual N-channel Trench MOSFET configuration.
  • 60V drain-source voltage rating.
  • 320mA continuous drain current at 25°C.
  • Logic-level gate for low-voltage drive.
  • AEC-Q101 qualified for automotive use.

BSS138BKS,115 Applications

  • Ideal for relay driver circuits.
  • Used in high-speed line drivers.
  • Suitable for low-side load switches.
  • Common in general switching circuits.

BSS138BKS,115 FAQs

1 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (VDS) of the BSS138BKS,115?

The maximum drain-source voltage is 60V.

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