| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The BSS127S-7 from Diodes Incorporated is an N-Channel enhancement mode field-effect transistor utilizing advanced planar technology. This MOSFET offers excellent high voltage performance and fast switching speeds, making it suitable for various applications including motor control, backlighting, DC-DC converters, and power management functions.
Key electrical characteristics include a Drain-Source Breakdown Voltage (VDS) of 600V and a typical On-Resistance (Rds(on)) of 160 Ohms at a Gate-Source Voltage (VGS) of 10V. The continuous drain current is rated up to 70mA at TA = +25°C with VGS = 10V.
This device is available in the SOT23 package and is supplied on tape and reel for automated assembly. It is designed for surface mounting. The MOSFET is also RoHS compliant, halogen-free, and antimony-free, meeting stringent environmental standards.
Mechanical data indicates a weight of approximately 0.008 grams. The BSS127S-7 is qualified to AEC-Q101 standards for high reliability, ensuring robust performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the BSS127S-7 is 600V.
The typical On-Resistance (Rds(on)) for the BSS127S-7 is 160 Ohms when the Gate-Source Voltage (VGS) is 10V.
The BSS127S-7 MOSFET is available in the SOT23 package.
The BSS127S-7 is supplied in Tape & Reel packaging with 3000 units per standard package.
Yes, the BSS127S-7 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSS127S-7 is Level 1.
Yes, the BSS127S-7 is Halogen and Antimony Free.
