| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,492 pcs
|
3492 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
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| SVHC Present |
The BSS123 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology, manufactured by CBI-electric Group. This logic-level FET is designed for applications requiring extremely fast switching speeds and compatibility with logic-level signals.
Key electrical characteristics include a drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of 150mA. The drain-source on-state resistance (RDS(ON)) is a maximum of 6 Ohms at VGS = 10V. The gate threshold voltage (VGS(TO)) is typically 2V.
This transistor is supplied in a subminiature SOT-23 surface mounting package, making it suitable for space-constrained designs. Its applications include relay drivers, high-speed line drivers, and telephone ringers.
Thermal performance is supported by a maximum power dissipation of 0.25W at 25°C ambient temperature and a thermal resistance junction to ambient of 500 K/W when mounted on FR4.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
SOT-23 surface mount package.
-55°C to 150°C.
150mA at 25°C ambient temperature.
6Ω maximum when VGS = 10V.
Typical 2V, maximum 2.8V.
