BSS123,215 BSS123,215 is an N-Channel TrenchMOS MOSFET from Nexperia, rated for 100V drain-source voltage and 150mA continuous drain current. It features low on-resistance of 6 Ohm and is optimized for logic-level gate drive.
Mfr Part #:

BSS123,215

Available from 5 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
BSS123,215 is an N-Channel TrenchMOS MOSFET from Nexperia, rated for 100V drain-source voltage and 150mA continuous drain current. It features low on-resistance of 6 Ohm and is optimized for logic-level gate drive.
✓ Total Stock: 3,487,479 pcs
$ Price Range: $0.04 - $0.29

BSS123,215 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

BSS123,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSS123,215 Description

Short technical summary and product information.

BSS123,215 is an N-Channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. using TrenchMOS technology. It is designed for logic-level gate drive with a threshold voltage range of 1V to 2.8V. The device is rated for a maximum drain-source voltage of 100V and continuous drain current of 150mA at 25°C ambient temperature. The typical on-resistance is 3.5 Ohm with a maximum of 6 Ohm at VGS=10V and ID=120mA.

 

The MOSFET features fast switching characteristics with typical turn-on time of 3ns and turn-off time of 12ns. Low input capacitance of 23pF typical (40pF max) and output capacitance of 6pF typical contribute to efficient high-speed operation. The device is capable of handling pulsed drain currents up to 600mA.

 

Packaged in a surface-mount SOT-23 (TO-236AB) package, the BSS123,215 is suitable for applications such as relay drivers, high-speed line drivers, and telephone ringer circuits. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 250mW when mounted on FR4 board.

BSS123,215 Quick Information

Product Type: MOSFET
Canonical Name: BSS123,215 N-Channel MOSFET
Subcategory: N-Channel MOSFET

BSS123,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS123,215 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.17 $0.17
100+ $0.11 $0.11
500+ $0.08 $0.08
1,000+ $0.07 $0.07
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS123,215 Features

  • 100V drain-source voltage rating.
  • 150mA continuous drain current.
  • Low on-resistance of 6 Ohm max.
  • Logic-level gate threshold voltage.
  • Fast switching with 3ns turn-on time.

BSS123,215 Applications

  • Relay driver applications.
  • High-speed line driver circuits.
  • Telephone ringer designs.

BSS123,215 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What package is the BSS123,215 available in?

Surface-mount SOT-23 (TO-236AB) package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the BSS123,215 RoHS compliant?

Yes, it is listed as RoHS3 Compliant, but this is unverified. Please verify with manufacturer.

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