| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP89,115 is an N-Channel enhancement mode MOSFET from Nexperia USA Inc. It features a maximum drain-source voltage of 240V and a continuous drain current of 375mA at ambient temperature. The on-resistance is 5 Ohm maximum at 340mA drain current and 10V gate drive. The gate threshold voltage is 2V maximum at 1mA drain current. Input capacitance is 120pF at 25V drain-source voltage. Maximum power dissipation is 1.5W at ambient temperature. The device is housed in a surface mount SOT-223 package (TO-261-4, TO-261AA) and supports a maximum junction temperature of 150°C. Suitable for low-power switching and load control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.04 | $1.04 |
| 10+ | $0.74 | $0.74 |
| 100+ | $0.50 | $0.50 |
| 500+ | $0.37 | $0.37 |
| 1,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 240V.
It is available in a SOT-223 surface mount package (TO-261-4, TO-261AA).
The maximum operating junction temperature is 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.
The maximum on-resistance is 5 Ohm at 340mA drain current and 10V gate drive.
The maximum gate threshold voltage is 2V at 1mA drain current.
The maximum continuous drain current is 375mA at ambient temperature.