| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,549 pcs
|
2549 pcs | On Request | 1 | On Request | On Request | 13+/16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon Technologies BSO040N03MS-G is an N-channel Power MOSFET from the OptiMOS™ 3 M-Series. It is optimized for 5V driver applications, including notebook, VGA, and POL power supplies. This MOSFET features a drain-source breakdown voltage of 30V and exhibits very low on-resistance, with a maximum of 4.9 mΩ at VGS=4.5V and ID=18A.
Key electrical characteristics include a gate threshold voltage between 1-2V and a total gate charge of 27-36 nC. The device also boasts excellent gate charge x R DS(on) product (FOM) for high-frequency SMPS applications. It is 100% avalanche tested and qualified for consumer-level applications.
The BSO040N03MS-G is supplied in a PG-DSO-8 package, suitable for surface mounting. It is Pb-free and RoHS compliant, as well as Halogen-free according to IEC61249-2-21 standards. The operating and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 1.5V.
The maximum on-resistance is 4.9 mΩ at VGS=4.5V and ID=18A.
The package type is PG-DSO-8.
Yes, the BSO040N03MS-G is RoHS3 Compliant.
The operating and storage temperature range is -55°C to 150°C.