| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Vishay Dale SI6968BEDQ is a dual N-channel MOSFET designed with TrenchFET® power MOSFET technology, providing enhanced performance and efficiency. This component offers a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of up to 6.5A at 25°C.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.022 Ohms at VGS = 4.5V and 0.030 Ohms at VGS = 2.5V. The device also features ESD protection up to 3000V.
Packaged in a TSSOP-8 configuration, the SI6968BEDQ is suitable for surface mount applications. Its operating junction and storage temperature range is -55°C to +150°C, with thermal resistance ratings provided for junction-to-ambient and junction-to-foot.
This MOSFET is designed for various applications requiring efficient power switching and robust ESD protection.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The SI6968BEDQ is available in a TSSOP-8 surface mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical on-resistance is 0.022 Ohm at VGS=4.5V and 0.030 Ohm at VGS=2.5V.
The gate threshold voltage range is 0.6V to 1.6V.
The maximum continuous drain current is 6.5A at 25°C and 5.5A at 70°C.
The typical total gate charge is 12 nC.