| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSN20,215 is an N-Channel enhancement mode MOSFET manufactured by Nexperia USA Inc. It is designed for low-power switching applications. The device features a drain-source voltage (Vdss) of 50V and a continuous drain current of 173mA at ambient temperature. The maximum on-resistance (Rds(on)) is 15 Ohms at a gate drive of 10V and 100mA drain current. The gate threshold voltage is typically 1V at 1mA drain current. The input capacitance is 25pF at 10V drain-source voltage. The maximum power dissipation is 830mW at case temperature. The device operates over a junction temperature range of -65°C to 150°C. It is housed in a surface mount package compatible with TO-236-3, SC-59, and SOT-23-3 footprints, with the supplier device package designated as TO-236AB. The MOSFET is RoHS compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include load switching, signal switching, and DC-DC converter circuits where low power and small footprint are required.
50V.
173mA at ambient temperature.
Surface mount SOT-23 (TO-236-3, SC-59, SOT-23-3).
-65°C to 150°C junction temperature.
Yes, RoHS3 compliant.
15 Ohms at Vgs=10V and Id=100mA.
1V maximum at Id=1mA.