| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Number of Pins | |
| Storage Temperature |
The Infineon BSM25GD120DN2 is a robust IGBT power module featuring a 3-phase full-bridge configuration and integrated fast free-wheel diodes. It is designed for demanding applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum collector-emitter voltage of 1200V and a continuous DC collector current of 35A at 25°C, derating to 25A at 80°C. The module can handle pulsed collector currents up to 70A and has a maximum power dissipation of 200W at 25°C.
This IGBT module is housed in an ECONOPACK 2 package with an insulated metal base plate, facilitating efficient heat dissipation. It operates within a temperature range of -40°C to +125°C and features a solder mounting type. The module has 17 pins and contains 6 transistors.
With its high voltage and current ratings, the BSM25GD120DN2 is suitable for various power electronic applications, including motor drives, inverters, and power supplies where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vces) is 1200V (minimum breakdown) and 1200V maximum.
The DC collector current is 35A at 25°C and 25A at 80°C.
The maximum power dissipation is 200W at 25°C case temperature.
The operating temperature range is -40°C to +125°C.
The BSM25GD120DN2 is housed in an Econopack 2 package.
The module contains 6 IGBT transistors.
The insulation test voltage is 2500Vac for 1 minute.