| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,974 pcs
|
28974 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The BSH301 is an N+N channel MOSFET manufactured by VBsemi, designed for various electronic applications. This component comes in a compact TSSOP8 package, suitable for surface-mount designs where space is a constraint.
Key electrical characteristics include a Drain-Source Voltage (Vds) of 20V and a Continuous Drain Current (Id) of 6.6A. The MOSFET utilizes Trench Technology, contributing to its efficient switching capabilities. It has a typical Gate Threshold Voltage (Vthtyp) ranging from 0.5V to 1.5V and a typical Drain-Source On-Resistance (RDS(on)) of 22mΩ when measured at a Gate-Source Voltage (Vgs) of 4.5V.
This MOSFET is designed with a ±20V Gate-Source Voltage rating. Its specifications make it suitable for applications requiring moderate power handling and efficient switching. The TSSOP8 package facilitates integration into printed circuit boards using surface-mount assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage (Vds) for the BSH301 is 20V.
The Continuous Drain Current (Id) for the BSH301 is 6.6A.
The typical on-resistance (RDS(on)) for the BSH301 at 4.5V VGS is 22mΩ.
The BSH301 MOSFET is supplied in a TSSOP8 package.
The typical Gate Threshold Voltage (Vthtyp) for the BSH301 ranges from 0.5V to 1.5V.
