Mfr Part #:

BSH205G2R

Available from 1 distributors

Mfr Name: Nexperia USA Inc.

P-Channel MOSFET, 20V drain-source voltage, 2A continuous drain current, surface mount SOT23 package.

✓ Total Stock: 7,000 pcs

$ Price Range: $0.12 - $0.61

BSH205G2R Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,000 pcs On Request	7000 pcs	On Request	1	On Request	On Request	2018+	On Request	On Request

BSH205G2R Description

Short technical summary and product information.

The BSH205G2R is a P-Channel enhancement mode Trench MOSFET from Nexperia USA Inc. It features a drain-source voltage of 20V and a continuous drain current of 2A at 25°C ambient. The device offers a low on-state resistance of 170mOhm maximum at VGS=4.5V and ID=2A, and a low gate threshold voltage of 950mV maximum. It is AEC-Q101 qualified for automotive applications.

Key electrical characteristics include a maximum gate charge of 6.5nC at VGS=4.5V and input capacitance of 418pF at VDS=10V. The MOSFET is designed for high-side load switching, relay drivers, high-speed line drivers, and general switching circuits. It is housed in a small SOT23 (TO-236AB) surface-mount package, enabling compact PCB designs.

The device supports an operating junction temperature range of -55°C to 150°C. Power dissipation is rated at 480mW under standard footprint conditions and up to 890mW with an enhanced mounting pad of 6cm². The package is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

BSH205G2R Quick Information

Product Type: P-Channel MOSFET

Canonical Name: BSH205G2R P-Channel MOSFET

Subcategory: P-Channel MOSFET

BSH205G2R Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSH205G2R Estimated Pricing

Qty	Low	High
1+	$0.61	$0.61
10+	$0.40	$0.40
100+	$0.27	$0.27
500+	$0.18	$0.18
1,000+	$0.16	$0.16
3,000+	$0.12	$0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSH205G2R Features

P-Channel Trench MOSFET technology.
Low on-state resistance of 170mOhm.
Rated for 20V drain-source voltage.
Supports 2A continuous drain current.
AEC-Q101 qualified for automotive.

BSH205G2R Applications

Used in relay driver circuits.
Ideal for high-speed line drivers.
Suitable for high-side load switches.
Used in general switching circuits.

BSH205G2R FAQs

7 frequently asked questions generated from this part’s specifications.

What is the operating voltage of the BSH205G2R?

The drain-source voltage is 20V.

What is the package type?

TO-236-3, SC-59, SOT-23-3; supplier device package TO-236AB.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the BSH205G2R RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum drain current?

2A continuous at 25°C ambient, 8A pulsed.

What is the on-resistance?

170mOhm maximum at VGS=4.5V and ID=2A.

What is the gate threshold voltage?

950mV maximum at ID=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Nexperia USA Inc.
AEC Qualified	Yes
Automotive Grade	Yes
Current	2 A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	418 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	480 mW (Ta)
Rds On (Max) @ Id, Vgs	170 mOhm @ 2 A, 4.5 V
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	TO-236AB
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±8 V
Vgs(th) (Max) @ Id	950 mV @ 250 µA