BSH205G2AR P-channel enhancement mode MOSFET in a SOT23 package. Features 20V drain-source voltage, 2.6A continuous drain current, and 118mΩ on-resistance.
Mfr Part #:

BSH205G2AR

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
P-channel enhancement mode MOSFET in a SOT23 package. Features 20V drain-source voltage, 2.6A continuous drain current, and 118mΩ on-resistance.
✓ Total Stock: 7,020 pcs
$ Price Range: $0.12 - $0.61

BSH205G2AR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request

BSH205G2AR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSH205G2AR Description

Short technical summary and product information.

The BSH205G2AR is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia using Trench MOSFET technology. It is designed for surface-mount applications and is housed in a small SOT23 (TO-236AB) plastic package.

 

Key electrical specifications include a maximum drain-source voltage of -20V, a continuous drain current of -2.6A at 25°C, and a maximum drain-source on-state resistance of 118mΩ at VGS = -4.5V. The device features a low gate threshold voltage of 900mV and a maximum gate-source voltage rating of ±8V. It is capable of very fast switching and has an extended operating junction temperature range from -55°C to 175°C.

 

The MOSFET is suitable for high-side load switch, relay driver, and high-speed line driver applications. It is AEC-Q101 qualified, making it appropriate for automotive-grade designs.

BSH205G2AR Quick Information

Product Type: MOSFET
Series: BSH205G2A
Canonical Name: BSH205G2A P-Channel Trench MOSFET
Subcategory: Single MOSFET

BSH205G2AR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSH205G2AR Estimated Pricing

Qty Low High
1+ $0.61 $0.61
10+ $0.39 $0.39
100+ $0.26 $0.26
500+ $0.18 $0.18
1,000+ $0.16 $0.16
3,000+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSH205G2AR Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • 2.6A continuous drain current.
  • 118mΩ maximum on-resistance.
  • AEC-Q101 qualified for automotive use.

BSH205G2AR Applications

  • High-side load switch applications.
  • Relay driver circuits.
  • High-speed line driver circuits.
  • General purpose switching circuits.

BSH205G2AR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSH205G2AR?

The maximum drain-source voltage (VDS) is -20 V.

What is the maximum continuous drain current?

The maximum continuous drain current (ID) is -2.6 A at 25°C with VGS = -4.5 V.

What is the on-resistance of this MOSFET?

The maximum drain-source on-state resistance (RDSon) is 118 mΩ at VGS = -4.5 V and ID = -2.6 A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the BSH205G2AR available in?

It is available in a SOT23 (TO-236AB) surface-mount package.

Is the BSH205G2AR RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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