| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,340 pcs
|
1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Junction Temperature | |
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| Tape & Reel | |
| Technology |
The Nexperia BSH205G2 is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a compact SOT23 (TO-236AB) surface-mounted device plastic package.
Key electrical characteristics include a maximum drain-source voltage of -20V and a gate-source voltage range of ±8V. The device exhibits low on-state resistance, with a typical value of 120 mΩ at VGS = -4.5V and ID = -2A. It offers an enhanced power dissipation capability of 890 mW at Tamb = 25°C when mounted on a specific PCB.
This MOSFET is AEC-Q101 qualified, making it suitable for demanding applications. Its features and benefits, such as low threshold voltage and low on-state resistance, make it ideal for relay drivers, high-speed line drivers, high-side load switches, and general switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V.
-2.3 A at 25°C ambient temperature with VGS = -4.5 V.
120 to 170 mΩ at VGS = -4.5 V and ID = -2 A.
SOT23 (TO-236AB) surface-mount package.
-55°C to 150°C.
±8 V.
Trench MOSFET technology.