| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
260 pcs
|
260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Forward Voltage (Max) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage (Min) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Typ) | |
| Feedback Capacitance (Typ) | |
| Forward Transconductance (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Leakage (Max) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Typ) | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (Typ) | |
| Rise Time (Typ) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction to Ambient (Typ) | |
| Turn-Off Delay Time (Typ) | |
| Turn-On Delay Time (Typ) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Max) | |
| drain_source_on_resistance (Typical/Maximum @ Id = 160 mA, Vgs = 10 V) | |
| drain_source_on_resistance (Typical/Maximum @ Id = 80 mA, Vgs = 4.5 V) | |
| gate_threshold_voltage (Typical @ Vds = Vgs, Id = 1 mA) |
The BSH201,215 is a P-channel enhancement mode MOSFET designed for low-voltage, low-current applications. It is manufactured by Nexperia USA Inc. and comes in a surface-mount SOT-23 package (TO-236AB). This device is logic-level compatible with a low threshold voltage, making it suitable for battery-powered and high-speed digital interfacing circuits.
Key electrical specifications include a maximum drain-source voltage of -60 V, continuous drain current of -0.3 A at 25°C, and a maximum on-resistance of 2.5 Ω at Vgs = -10 V. The gate threshold voltage is typically 1.9 V. The device offers fast switching with typical turn-on delay of 2 ns and rise time of 4.5 ns. Total gate charge is typically 3 nC.
The MOSFET is housed in a TO-236-3 (SOT-23) package, which is subminiature and suitable for space-constrained designs. It is surface-mountable and has a maximum power dissipation of 417 mW at 25°C ambient. The operating junction temperature range is -55°C to 150°C.
This component is ideal for battery-powered applications, load switching, and high-speed digital interfacing where low threshold voltage and fast switching are required. The device is RoHS compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.60 | $0.60 |
| 10+ | $0.42 | $0.42 |
| 100+ | $0.29 | $0.29 |
| 500+ | $0.21 | $0.21 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BSH201,215 is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package, with supplier device package TO-236AB.
-55°C to 150°C (junction temperature).
RoHS status is listed as RoHS3 Compliant but is unverified. Verify with manufacturer.
Maximum drain-source voltage is -60 V.
Maximum continuous drain current is 300 mA at 25°C ambient.
Minimum gate threshold voltage is 1 V at Id = 1 mA; typical is 1.9 V.
Maximum on-resistance is 2.5 Ω at Vgs = -10 V, Id = -160 mA.