| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110,000 pcs
|
110000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
9,850 pcs
|
9850 pcs | On Request | 1 | On Request | On Request | 0611+ | On Request | On Request |
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The BSH112 is a P-Channel enhancement mode MOSFET manufactured by Philips. It is designed for low-power switching applications requiring a drain-source voltage rating of 60V and continuous drain current up to 300mA at 25°C case temperature. The device offers a maximum drain-source on-resistance of 5Ω when driven with a gate-source voltage of 10V, and 5.3Ω at 4.5V, making it suitable for logic-level gate drive circuits.
With a maximum total power dissipation of 0.83W at 25°C, the BSH112 is housed in the industry-standard SOT-23 surface-mount package. The junction temperature range extends from -65°C to 150°C, allowing operation in a wide variety of environments. The gate-source voltage is rated at ±15V maximum, providing good noise immunity.
This MOSFET is commonly used in load switching, DC-DC converter auxiliary circuits, and battery management systems where space is constrained. The SOT-23 package enables compact PCB layouts and is compatible with automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The BSH112 is available in a SOT-23 surface-mount package.
The junction temperature range is -65°C to 150°C.
The maximum continuous drain current is 300mA at 25°C case temperature, and 190mA at 100°C.
The maximum drain-source on-resistance is 5Ω at VGS=10V and 5.3Ω at VGS=4.5V.
The maximum gate-source voltage is ±15V.
The maximum total power dissipation is 0.83W at 25°C case temperature.