Mfr Part #:

BSH111BKR

N-Channel enhancement mode MOSFET with 55V drain-source voltage and 210mA continuous drain current. Housed in a TO-236AB (SOT23) surface-mount package.

✓ Total Stock: 79,042 pcs

$ Price Range: $0.03 - $0.24

BSH111BKR Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	79,020 pcs On Request	79020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	22 pcs On Request	22 pcs	On Request	1	On Request	On Request	19+	On Request	On Request

BSH111BKR Description

Short technical summary and product information.

The BSH111BKR is an N-channel enhancement mode Field-Effect Transistor (FET) from Nexperia, utilizing Trench MOSFET technology. It is designed for low-voltage switching applications and offers a maximum drain-source voltage of 55 V and a continuous drain current of 210 mA at 25 °C ambient temperature. The device features a low typical on-state resistance of 2.3 Ω at VGS = 4.5 V, ensuring efficient power handling. With a threshold voltage of 1.3 V max, it is suitable for low-voltage drive circuits. The MOSFET includes built-in ESD protection greater than 3 kV HBM, enhancing robustness in handling and operation. Key dynamic characteristics include an input capacitance of 30 pF and a total gate charge of 0.5 nC, enabling fast switching. Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The device is supplied in a TO-236AB (SOT23) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55 °C to 150 °C.

BSH111BKR Quick Information

Product Type: N-Channel MOSFET

Series: BSH111BK

Canonical Name: BSH111BKR N-Channel MOSFET

Subcategory: N-Channel MOSFET

BSH111BKR Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSH111BKR Estimated Pricing

Qty	Low	High
1+	$0.24	$0.24
10+	$0.15	$0.15
100+	$0.09	$0.09
500+	$0.07	$0.07
1,000+	$0.06	$0.06
3,000+	$0.05	$0.05
6,000+	$0.04	$0.04
9,000+	$0.03	$0.03
24,000+	$0.03	$0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSH111BKR Features

55V drain-source voltage rating.
210mA continuous drain current at 25°C.
Low on-state resistance of 2.3Ω typical.
ESD protection greater than 3kV HBM.
Surface-mount SOT23 package.

BSH111BKR Applications

Relay driver applications.
High-speed line driver circuits.
Low-side load switching.
General switching circuits.

BSH111BKR FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

55 V.

What package is the BSH111BKR available in?

TO-236AB (SOT23) surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BSH111BKR RoHS compliant?

RoHS3 compliant (unverified).

Does the BSH111BKR have ESD protection?

Yes, ESD protection >3 kV HBM.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Nexperia USA Inc.
Current	210 mA
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
ESD Protection	> 3 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.5 nC
Input Capacitance (Ciss) (Max) @ Vds	30 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	302 mW
Rds On (Max) @ Id, Vgs	2.3 Ω typ, 4 Ω max
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	TO-236AB
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±10 V
Vgs(th) (Max) @ Id	1.3 V