| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,238 pcs
|
22238 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSH108,215 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology to deliver very fast switching performance with logic-level gate drive compatibility. The device is designed for low power DC-to-DC converters, high speed switching, and battery management applications.
Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 1.9A at 25°C case temperature, and a peak pulsed drain current of 7.5A. The drain-source on-state resistance is typically 77mΩ at Vgs=10V and Id=1A, with a maximum of 120mΩ. At logic-level gate drive (Vgs=5V), the on-resistance is typically 102mΩ with a maximum of 140mΩ. The device can dissipate up to 830mW of power at 25°C case temperature.
The BSH108 is housed in a TO-236AB (SOT23) surface mount package, making it suitable for compact PCB designs. It features a maximum gate-source voltage of ±20V and a gate threshold voltage of 2V maximum at Id=1mA. The operating junction temperature range is -65°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
| 10+ | $0.38 | $0.38 |
| 100+ | $0.24 | $0.24 |
| 500+ | $0.18 | $0.18 |
| 1,000+ | $0.16 | $0.16 |
| 3,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 30V.
The continuous drain current (ID) is 1.9A at 25°C case temperature with VGS=5V.
The drain-source on-state resistance is typically 77mΩ (max 120mΩ) at VGS=10V and ID=1A, and typically 102mΩ (max 140mΩ) at VGS=5V and ID=1A.
The BSH108 is available in a TO-236AB (SOT23) surface mount package.
The maximum total power dissipation is 830mW at 25°C case temperature.
The operating junction temperature range is -65°C to +150°C.
The maximum gate threshold voltage is 2V at ID=1mA.