BSH105,215 BSH105,215 is an N-Channel enhancement mode MOSFET from Nexperia with 20V drain-source voltage and 1.05A continuous drain current, packaged in a SOT23 surface mount package.
Mfr Part #:

BSH105,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
BSH105,215 is an N-Channel enhancement mode MOSFET from Nexperia with 20V drain-source voltage and 1.05A continuous drain current, packaged in a SOT23 surface mount package.
✓ Total Stock: 166,020 pcs
$ Price Range: $0.08 - $0.78

BSH105,215 Available from 1 distributor

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✓ Non-Authorised
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166,020 pcs
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BSH105,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSH105,215 Description

Short technical summary and product information.

The BSH105,215 is an N-Channel enhancement mode MOSFET designed for low voltage, logic level applications. Manufactured by Nexperia, it features a drain-source voltage of 20V and a continuous drain current of 1.05A at 25°C ambient. The device offers very low threshold voltage, typically 0.57V, making it logic level compatible.

 

Key electrical characteristics include a low on-state resistance of 200mΩ maximum at Vgs = 4.5V and Id = 0.6A, and 300mΩ maximum at Vgs = 1.8V and Id = 0.3A. The gate threshold voltage is typically 0.57V with a minimum of 0.4V, enabling direct drive from low voltage logic circuits. Total gate charge is 3.9nC typical, and input capacitance is 152pF typical, contributing to fast switching performance.

 

The device is supplied in the SOT23 (TO-236AB) subminiature surface mount package, suitable for space-constrained designs. Operating temperature range is -55°C to 150°C. This MOSFET is ideal for battery-powered applications and high speed digital interfacing.

BSH105,215 Quick Information

Product Type: Single MOSFET
Series: BSH105
Canonical Name: BSH105,215 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode

BSH105,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSH105,215 Estimated Pricing

Qty Low High
1+ $0.78 $0.78
10+ $0.51 $0.51
100+ $0.34 $0.34
500+ $0.21 $0.21
1,000+ $0.16 $0.16
3,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSH105,215 Features

  • N-Channel enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 1.05A continuous drain current.
  • Very low threshold voltage 0.57V typical.
  • Surface mount SOT23 package.

BSH105,215 Applications

  • Battery-powered portable electronics.
  • High speed digital interfacing circuits.
  • Logic level load switching.
  • DC-DC converter and power management.

BSH105,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSH105,215?

The maximum drain-source voltage is 20V.

What is the continuous drain current of this MOSFET?

The continuous drain current is 1.05A at 25°C ambient temperature.

What is the on-resistance of the BSH105,215?

The drain-source on-state resistance is 200mΩ maximum at Vgs = 4.5V and Id = 0.6A.

What package is the BSH105,215 available in?

It is supplied in a SOT23 (TO-236AB) surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSH105,215 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.

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