| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,204 pcs
|
1204 pcs | On Request | 1 | On Request | On Request | 22+21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs |
The Nexperia BSH103 is an N-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 850mA at 25°C. The device exhibits a maximum on-resistance (Rds On) of 400mOhm at 500mA and 4.5V gate-source voltage.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 400mV at 1mA, a maximum gate-to-source voltage (Vgs) of ±8V, and an input capacitance (Ciss) of 83pF at 24V. The power dissipation is rated at 540mW at 25°C. The MOSFET is housed in a TO-236AB package and is designed for surface mounting.
This component is suitable for applications requiring efficient switching and voltage control. Its specifications make it a viable option for power management circuits and signal switching within electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) of the BSH103 is 30V.
The continuous drain current (Id) for the BSH103 at 25°C is 850mA.
The maximum on-resistance (Rds On) of the BSH103 is 400mOhm at 500mA drain current and 4.5V gate-source voltage.
The BSH103 is supplied in a TO-236AB package for surface mounting.
The maximum gate-to-source voltage (Vgs) for the BSH103 is ±8V.