| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,251 pcs
|
6251 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
91 pcs
|
91 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Infineon BSG0811ND is a dual asymmetric N-channel MOSFET belonging to the OptiMOS™5 family. It is specifically optimized for high-performance buck converter applications and operates with a logic-level gate, rated for 4.5V.
Key electrical characteristics include a drain-source breakdown voltage of 25V. The device offers a maximum continuous drain current of 50A at 70°C case temperature with a 10V gate-source voltage. Its on-state resistance is as low as 0.8 mΩ (typical) for Q2 at 10V gate-source voltage and 20A drain current, and 3 mΩ (typical) for Q1 under the same conditions.
The MOSFET is housed in a PG-TISON8-4 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The component is Pb-free and Halogen-free, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 25V.
The maximum continuous drain current is 50A.
The typical gate threshold voltage for Q1 is 1.6V.
The typical gate threshold voltage for Q2 is 1.2V.
The maximum on-state resistance for Q2 is 1.1mΩ.
The package type is PG-TISON8-4.
Yes, the BSG0811ND is RoHS3 Compliant.