BSC014N04LSI
Infineon
The Infineon BSC014N04LSI is a 40V N-channel Power MOSFET optimized for synchronous rectification. It features very low on-resistance and an integrated Schottky-like diode.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23,500 pcs
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23500 pcs | On Request | 1 | On Request | On Request | 1851+ | On Request | On Request | |
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1,589 pcs
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1589 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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694 pcs
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694 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSG0810NDI is a dual asymmetric N-channel OptiMOS™5 MOSFET designed for high-performance Buck converter applications. It features logic-level gate drive, rated for 4.5V.
Key electrical characteristics include a drain-source breakdown voltage of 25V and a low on-state resistance (RDS(on)) as low as 0.7mΩ typical at 4.5V gate drive. Continuous drain current is rated up to 50A under specific conditions.
This MOSFET is qualified according to JEDEC standards for target applications and is RoHS compliant with Pb-free lead plating. It also meets halogen-free requirements according to IEC61249-2-21. The device is housed in a PG-TISON-8-4 package suitable for surface mounting.
It integrates a monolithic Schottky-like diode for enhanced performance. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 25V.
The typical gate threshold voltage is 2.5V.
The maximum continuous drain current is 50A.
The typical on-state resistance is 0.7mΩ at VGS=4.5V and 20A for Q2, and 2.4mΩ at VGS=4.5V and 20A for Q1.
The operating and storage temperature range is -55°C to 150°C.
The BSG0810NDI is supplied in a PG-TISON-8-4 package.
Yes, the BSG0810NDI is RoHS3 Compliant.
