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BSZ018NE2LS

The Infineon Technologies BSZ018NE2LS is an N-channel MOSFET with a 25V drain-source voltage and a maximum on-resistance of 1.8 mΩ at 10V gate-source voltage. It is supplied in a TSDSON-8 FL package.

✓ Total Stock: 7,990 pcs

$ Price Range: $1.76

BSZ018NE2LS Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,745 pcs On Request	4745 pcs	On Request	1	On Request	On Request	1350+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,837 pcs On Request	1837 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	1,408 pcs On Request	1408 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSZ018NE2LS Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon Technologies
Gate Charge	17.5 nC
Halogen Free	Halogen-free according to IEC61249-2-21
Mounting Type	Surface Mount

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BSZ018NE2LS Description

Short technical summary and product information.

The Infineon Technologies BSZ018NE2LS is a high-performance N-channel OptiMOSTM Power-MOSFET designed for demanding applications. It features a maximum drain-source voltage (VDS) of 25V and offers very low on-resistance, with a maximum of 1.8 mΩ at VGS=10V and 2.4 mΩ at VGS=4.5V. The continuous drain current (ID) can reach up to 153A at TC=25°C with VGS=10V.

This MOSFET is optimized for high-performance buck converters in server and VGA applications, offering a very low figure of merit (FOM) for high-frequency Switched-Mode Power Supplies (SMPS). It is 100% avalanche tested and provides superior thermal resistance. The component is qualified according to JEDEC standards for target applications.

The BSZ018NE2LS is housed in a TSDSON-8 FL package, suitable for surface mounting. It is Pb-free and RoHS compliant, as well as halogen-free according to IEC61249-2-21 standards.

BSZ018NE2LS Quick Information

Product Type: N-channel MOSFET

Canonical Name: Infineon Technologies BSZ018NE2LS N-channel Power MOSFET

Subcategory: N-channel

BSZ018NE2LS Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free lead plating

BSZ018NE2LS Estimated Pricing

Qty	Low	High
1+	$1.76	$1.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ018NE2LS Features

25V drain-source voltage rating.
Low on-resistance: 1.8mΩ max @ 10V.
High continuous drain current: 153A max.
Optimized for high-frequency SMPS.
TSDSON-8 FL surface mount package.

BSZ018NE2LS Applications

High performance buck converters.
Server power supply applications.
VGA power supply applications.
High frequency SMPS designs.

BSZ018NE2LS FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the BSZ018NE2LS MOSFET?

The maximum drain-source voltage (VDS) for the BSZ018NE2LS is 25V.

What is the maximum on-resistance of the BSZ018NE2LS MOSFET at 10V gate-source voltage?

The maximum on-resistance (RDS(on)) of the BSZ018NE2LS MOSFET at a gate-source voltage of 10V is 1.8 mΩ.

What is the maximum continuous drain current for the BSZ018NE2LS MOSFET at 25°C case temperature?

The maximum continuous drain current (ID) for the BSZ018NE2LS MOSFET is 153A when the case temperature is 25°C and the gate-source voltage is 10V.

What package type is the BSZ018NE2LS MOSFET supplied in?

The BSZ018NE2LS MOSFET is supplied in a TSDSON-8 FL package.

Is the BSZ018NE2LS MOSFET RoHS compliant?

The BSZ018NE2LS MOSFET is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSZ018NE2LS MOSFET?

The Moisture Sensitivity Level (MSL) for the BSZ018NE2LS MOSFET is 1.

Does the BSZ018NE2LS MOSFET meet REACH requirements?

The BSZ018NE2LS MOSFET is REACH Unaffected.