TMBT3906.LMT
Toshiba
The Toshiba TMBT3906.LMT is a single bipolar junction transistor (BJT) in the Transistors - Bipolar (BJT) - Single category. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 915 | On Request | On Request |
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The Infineon Technologies BSC119N03S G is an N-Channel MOSFET designed for various electronic applications. It offers a Drain-Source Voltage of 30V and a Continuous Drain Current of 11.9A.
This component is housed in a TDSON-8 package, suitable for surface-mount applications. Its specifications make it a versatile choice for power management and switching circuits.
Key electrical characteristics include its N-Channel configuration, providing efficient current control. The device is designed to meet the demands of modern electronic systems requiring reliable performance.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Voltage is 30V.
The Continuous Drain Current is 11.9A.
The BSC119N03S G is in a TDSON-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.