BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
214 pcs
|
214 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC057N03LS-G is an N-channel OptiMOS™3 Power-MOSFET. It is optimized for applications such as Switched-Mode Power Supplies (SMPS) and DC/DC converters, featuring fast switching characteristics.
Key electrical specifications include a maximum drain-source breakdown voltage of 30 V and a low on-resistance, with a maximum of 5.7 mΩ at VGS=10 V and ID=30 A. The continuous drain current is rated up to 71 A at TC=25 °C (VGS=10 V).
This MOSFET is housed in a PG-TDSON-8 package, suitable for surface mounting. It is avalanche rated and Pb-free, with halogen-free plating according to IEC61249-2-21.
Dynamic characteristics include typical values for input capacitance (Ciss) of 1800 pF and output capacitance (Coss) of 690 pF. Gate charge parameters such as Qgs, Qg(th), Qgd, Qsw, and total Qg are also specified, indicating its switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 30 V.
The typical gate threshold voltage is 1 V.
The maximum drain-source on-state resistance is 8.5 mW at VGS=4.5 V and ID=30 A.
The maximum continuous drain current is 71 A at VGS=10 V and TC=25 °C.
The package type is PG-TDSON-8.
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
