BSC022N04LS6
Infineon
The Infineon BSC022N04LS6 is an N-channel MOSFET designed for synchronous applications. It offers a low on-resistance of 2.2 mΩ and a drain-source voltage of 40V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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280 pcs
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280 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Gate Charge | |
| Halogen Free | |
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| Tape & Reel |
The Infineon Technologies BSC025N03LS-G is a high-performance N-channel Power MOSFET from the OptiMOS™ 3 family. It is engineered for demanding applications such as Switched-Mode Power Supplies (SMPS) and DC/DC converters, benefiting from optimized technology for efficient operation.
Key electrical characteristics include a maximum Drain-Source Voltage (VDS) of 30V and a very low on-resistance (RDS(on)) of 2.5 mΩ at a gate-source voltage of 10V and a drain current of 50A. The continuous drain current (ID) is rated up to 147A at 25°C with VGS=10V, and 93A at 100°C. It also features a fast switching capability and an optimized gate charge for excellent figure of merit (FOM).
This MOSFET is housed in a PG-TDSON-8 package, suitable for surface mount applications. It is Pb-free and Halogen-free, complying with RoHS and IEC61249-2-21 standards. The part is avalanche rated for enhanced reliability in power applications.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) for the BSC025N03LS-G is 30V.
The typical on-resistance (RDS(on)) of the BSC025N03LS-G is 2.5 mΩ at VGS=10V and ID=50A.
The continuous drain current (ID) for the BSC025N03LS-G is rated up to 147A at 25°C (VGS=10V) and 93A at 100°C (VGS=10V).
The BSC025N03LS-G MOSFET is supplied in the PG-TDSON-8 package.
Yes, the BSC025N03LS-G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC025N03LS-G is 1.
Yes, the BSC025N03LS-G is Pb-free plated.